19N20C

19N20C

19N20C 200V N-Channel MOSFET QFET ® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

3,80  χωρίς ΦΠΑ

7 σε απόθεμα

Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 139 W Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 19 A Maximum Junction Temperature (Tj): 150 °C

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