• Low drain-source ON-resistance: RDS (ON) = 1. 0 Ω (typ. ) • High forward transfer admittance: ⎪Yfs⎪ = 7. 0 S (typ. ) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2. 0 to 4. 0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C)